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Diffusion of interstitial magnesium in dislocation-free silicon
Diffusion of interstitial magnesium in dislocation-free silicon
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Diffusion of interstitial magnesium in dislocation-free silicon

Shuman, V B ; Lavrent’ev, A A ; Astrov, Yu A ; Lodygin, A N ; Portsel, L M

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.1-3 [Rivista Peer Reviewed]

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2
High-temperature diffusion of magnesium in dislocation-free silicon
High-temperature diffusion of magnesium in dislocation-free silicon
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High-temperature diffusion of magnesium in dislocation-free silicon

Shuman, V B ; Astrov, Yu A ; Lodygin, A N ; Portsel, L M

Semiconductors (Woodbury, N.Y.), 2017-08, Vol.51 (8), p.1031-1033 [Rivista Peer Reviewed]

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3
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

Shastin, V N ; Zhukavin, R Kh ; Kovalevsky, K A ; Tsyplenkov, V V ; Rumyantsev, V V ; Shengurov, D V ; Pavlov, S G ; Shuman, V B ; Portsel, L M ; Lodygin, A N ; Astrov, Yu A ; Abrosimov, N V ; Klopf, J M ; Hübers, H.-W

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1234-1237 [Rivista Peer Reviewed]

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4
Further investigations of the deep double donor magnesium in silicon
Further investigations of the deep double donor magnesium in silicon
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Further investigations of the deep double donor magnesium in silicon

Abraham, Rohan ; DeAbreu, Adam ; Morse, Kevin ; Shuman, Valentina ; Portsel, Leonid ; Lodygin, Anatoly ; Astrov, Yuri ; Abrosimov, Nikolay ; Pavlov, Sergey ; Hübers, Heinz-Wilhelm ; Simmons, Stephanie ; Thewalt, Michael

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5
Townsend discharge in argon and nitrogen: Study of the electron distribution function
Townsend discharge in argon and nitrogen: Study of the electron distribution function
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Townsend discharge in argon and nitrogen: Study of the electron distribution function

Lodygin, A. N ; Portsel, L. M ; Beregulin, E. V ; Astrov, Yu. A

Journal of applied physics, 2019-11-07, Vol.126 (17), p.173302 [Rivista Peer Reviewed]

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6
GaAs oxidation with Townsend-discharge three-electrode microreactor
GaAs oxidation with Townsend-discharge three-electrode microreactor
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GaAs oxidation with Townsend-discharge three-electrode microreactor

Astrov, Yu. A ; Lodygin, A. N ; Portsel, L. M ; Sitnikova, A. A

Journal of applied physics, 2018-09-14, Vol.124 (10), p.103303 [Rivista Peer Reviewed]

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7
Radii of Rydberg states of isolated silicon donors
Radii of Rydberg states of isolated silicon donors
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Radii of Rydberg states of isolated silicon donors

Li, Juerong ; Le, Nguyen ; Li, K ; Clowes, K ; Engelkamp, H ; Pavlov, S ; Hübers, H ; Shuman, V ; Portsel, L. М ; Lodygin, А ; Astrov, Yu ; Abrosimov, V ; Pidgeon, C ; Fisher, A ; Zeng, Zaiping ; Niquet, Y.-M ; Murdin, N

Physical review. B, Condensed matter and materials physics, 2018-08, Vol.98 (8) [Rivista Peer Reviewed]

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8
Investigation of the Magnesium Impurity in Silicon
Investigation of the Magnesium Impurity in Silicon
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Investigation of the Magnesium Impurity in Silicon

Portsel, L. M ; Shuman, V. B ; Lavrent’ev, A. A ; Lodygin, A. N ; Abrosimov, N. V ; Astrov, Yu. A

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.393-398 [Rivista Peer Reviewed]

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9
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals
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DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

Yarykin, N ; Shuman, V B ; Portsel, L M ; Lodygin, A N ; Astrov, Yu A ; Abrosimov, N V ; Weber, J

Semiconductors (Woodbury, N.Y.), 2019-06, Vol.53 (6), p.789-794 [Rivista Peer Reviewed]

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10
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon
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Decomposition of a Solid Solution of Interstitial Magnesium in Silicon

Shuman, V. B ; Lodygin, A. N ; Portsel, L. M ; Yakovleva, A. A ; Abrosimov, N. V ; Astrov, Yu. A

Semiconductors (Woodbury, N.Y.), 2019-03, Vol.53 (3), p.296-297 [Rivista Peer Reviewed]

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